tsztnl-donauctoi , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJ13332 description ? collector-emitter sustaining voltage- : vceo(sus) = 350v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25c) thermal characteristics symbol vcev vceo vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25'c junction temperature storage temperature value 650 350 6 20 30 10 15 175 200 -65-200 unit v v v a a a a w c c symbol r(h j-c parameter thermal resistance, junction to case max 1.0 unit "c/w 3 i pin 1.base 1 f 2. emitter ^\. collect or (case) 2 to-3 package t-e m t r-n ? | -*iu i; jfr-5 v-_ m3 dim a b 2i c i d ( e 2 jl h k 1 l n n 1 q u 3 v -i i _j ? c ? d 2 pl \ 1 _$ c / 1 a nun mm max 3900 5.30 26.67 j.30 11.10 )90 110 !.90 3.10 10.92 546 .40 13.50 5.75 17.05 3.40 19.62 4.00 420 diqq 30.20 ?.30 450_ : -i3ei . f i b ' i nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJ13332 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vee(sat) icev icer iebo hpe-i hfe-2 ft cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current gain-bandwidth product output capacitance conditions lc=100ma;lb=0 ic=10a;ib=1-5a lc=10a; ib=1.8a,tc=100'c lc= 20a; ib= 5a lc= 10a; ib= 1.5a lc=10a;lb=1.8a,tc=100'c vcev=450v;vbe(off)=1.5v vcev=450v;vbe(off)=1 .5v;tc=1 50"c vce= 450v; rbe= 50 q ,tc= 100'c veb= 6v; lc=0 lc= 5a ; vce= 5v lc=10a; vce=5v ig= 0.3a ;vce= 10v; ftest=1mhz ie= 0; vcb= 10v; ftest=100khz min 350 15 8 5 100 typ. max 1.5 2.5 3.5 1.8 1.8 0.25 5.0 5.0 0.5 75 40 400 unit v v v v ma ma ma pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc=10a, vcc=175v; ib1=1.5a \/o,-, tn? ta/' t ? ^fi n c- duty cycle ^2.0% 0.08 0.55 0.7 0.11 0.2 1.0 3.5 0.7 u s u s u s u s
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